Device for epitaxially providing a layer of semiconductor materi

Details Device for epitaxially providing a layer of semiconductor materi Device for epitaxially providing a layer of semiconductor materi

1981-01-12

1982-11-09

McIntosh, John P.

Coating apparatus

Immersion or work-confined pool type

Work-confined pool

118415, 118421, H01L 21208

Patent

active

043578977

ABSTRACT:
A liquid-phase epitaxial growth device has a reservoir holder (1), a slider (14) movably mounted below the reservoir holder to enable each reservoir (2, 3, 4, 5) to be selectively uncovered so as to allow semiconductor melt in each reservoir to pass through each aperture (15, 16, 17, 18) in the slider, a movable substrate holder (22) for receiving one or more semiconductor substrates (25, 26) that are placeable below each aperture, and a member (19) for receiving semiconductor melt from each aperture when it is uncovered by movement of the substrate holder. A locking mechanism (30, 31, 32, and 33) enables the slider to be locked to the reservoir holder at one or more substantially fixed positions.

REFERENCES:
patent: 3665888 (1972-05-01), Bergh et al.
patent: 3690965 (1972-09-01), Bergh et al.
Apparatus for Continuous Liquid Phase Epitaxy Growth, Blum et al., IBM Technical Disclosure Bulletin, vol. 15, No. 8, Jan. 1973.

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