Device for epitaxial growing of semiconductor periodic structure

Details Device for epitaxial growing of semiconductor periodic structure Device for epitaxial growing of semiconductor periodic structure

1977-04-19

1977-12-20

Reynolds, Wm. Carter

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With cutting, punching or tearing of work

Web or sheet work

C23C 1308

Patent

active

040635295

ABSTRACT:
A device for epitaxial growing of semiconductor periodic structures from a gas phase, comprises a pressure-tight tubular reactor filled with gas and set in a tilted position, an electric motor located outside the reactor and designed to rotate said reactor about its longitudinal axis, at least one group of elements located inside the reactor, comprising a holder of at least two sources of substances of different solid semiconductor materials, which are adjacent to each other, a unit for holding at least one substrate and a device for maintaining a constant clearance between the surfaces of the substrate and the sources, as well as heaters of the sources and the substrate located outside the reactor.

REFERENCES:
patent: 3008447 (1961-11-01), Lacroix
patent: 3047424 (1962-07-01), Suchoff
patent: 3047438 (1962-07-01), Marinace
patent: 3131099 (1964-04-01), Constantakes
patent: 3425878 (1969-02-01), Dersin et al.

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