Device for epitaxial growing of semiconductor periodic structure

Coating apparatus – With cutting – punching or tearing of work – Web or sheet work

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427248G, C23C 1308

Patent

active

041008790

ABSTRACT:
A device in which a reaction vessel is filled with a gas, and in which first and second equal and coaxial disks are located. They have parallel operational surfaces carrying respectively, at least one substrate and at least two sources of different semiconductor substances forming the semiconductor periodic structure. A substrate heater and a source heater are placed near the first and second disks, respectively. First and second electric motors are arranged outside the reaction vessel in order to rotate, respectively, the first and second disks about the vessel vertical axis, as well as a drive to shift one of the disks along the axis.

REFERENCES:
patent: 2692574 (1954-10-01), Anderson
patent: 3023727 (1962-03-01), Theodoseau et al.
patent: 3424628 (1969-01-01), Winings
patent: 3633537 (1972-01-01), Howe
patent: 3696779 (1972-10-01), Murai et al.
patent: 3783822 (1974-01-01), Wollam

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