Device for electrostatic discharge protection and method of...

Details Device for electrostatic discharge protection and method of... Device for electrostatic discharge protection and method of...

2006-07-25

2006-07-25

Tran, Mai-Huong (Department: 2818)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

C361S056000, C361S091100, C361S111000

Reexamination Certificate

active

07081394

ABSTRACT:
The present invention relates to a device for electrostatic discharge protection (ESD). According to an embodiment of the present invention, a device for electrostatic discharge protection comprises a semiconductor substrate, a plurality of field oxide films formed in predetermined regions on the semiconductor substrate, a gate formed in a predetermined region on the semiconductor substrate between the field oxide films, a well pick-up region formed in a predetermined region on the semiconductor substrate between the field oxide films, a source formed in a predetermined region on the semiconductor substrate between the field oxide film and the gate, a drain drift region formed in a predetermined region on the semiconductor substrate between the gate and the field oxide film, a drain active region of a concentration higher than that of the drain drift region, the drain active region being formed in the drain drift region, and an oxide film formed on the semiconductor substrate on a boundary of the drain drift region and the drain active region. Accordingly, the current concentrated on the surface of the device can be uniformly distributed over the entire device.

REFERENCES:
patent: 6144538 (2000-11-01), Chao
patent: 2000-27290 (2000-05-01), None
patent: 2003-2447 (2003-01-01), None
Office action in corresponding Korean Application No. 2004-18063 dated Jan. 17, 2006.

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