Device for detecting X-rays

Radiant energy – Invisible radiant energy responsive electric signalling – Semiconductor system

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25037001, 25037009, 257428, G01T 124

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active

053528972

ABSTRACT:
A soft X-ray detector includes a surface electrode layer, a photoelectric conversion layer, and a semiconductor detector having an electrode connected to the photoelectric conversion layer, for detecting an electric charge produced In the photoelectric conversion layer. The photoelectric conversion layer and the surface electrode layer have thicknesses satisfying conditions

REFERENCES:
patent: 4926052 (1990-05-01), Hatayama et al.
Arata et al., "Multichannel Measurement of Soft X-ray with MCP and OMA System", Trans. of JWRI, vol. 12 No. 1 1983, pp. 51-55.
Sayre et al., "X-Ray Microscopy II", Optical Sciences, pp. 124-129.
Applied Physics of Electronic Materials, Corona Publishing, 1989, pp. 126-131 and p. 250.
J. Barth et al., "Characteristics and applications of semiconductor . . .", SPIE vol. 733, 1986, pp. 481-485.
Kenji Miyata et al., "Amplified MOS Imager", ITEJ Technical Report vol. 14, Feb. 1990, pp. 33-38.
Forbes R. Powell et al., "Thin film filter performance for extreme . . .", Optical Engineering, Jun. 1990, pp. 614-624.
Edward D. Palik, "Handbook of Optical Constants of Solids", Academic Press, Inc., 1985, pp. 284-285 and 398-399.
Henke et al., "Low energy X-ray interaction . . .", Atomic Data and Nuclear Data Tables, vol. 27, 1982.

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