Device for connecting in parallel power transistors in very high

Details Device for connecting in parallel power transistors in very high Device for connecting in parallel power transistors in very high

1980-11-18

1983-10-04

Edlow, Martin H.

357 75, H01L 3902

Patent

active

044082193

ABSTRACT:
A device for connecting in parallel high power transistors in very high frequency having a first plate serving as an electrical and thermal earth plane and a second electrically insulating plate supporting two metallized zones for connection respectively to the system of first parallel-connected electrodes of a transistor and a system of second parallel-connected electrodes of the same transistors, the third electrodes being connected to earth. The transistors, in the form of monolithic systems, are respectively placed on electrically insulating and thermally conductive plates welded to the first zone, while connecting the first electrodes to a first series of terminals and connecting the second electrodes to a second series of terminals. The metallized zones are respectively connected to the terminals of each series by conductors passing through the second electrically insulating plate, the transistors being inserted between the first and second plates.

REFERENCES:
patent: 4296456 (1981-10-01), Reid

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