Device for chemical dry etching of integrated circuits

Details Device for chemical dry etching of integrated circuits Device for chemical dry etching of integrated circuits

1980-08-20

1982-02-23

Weisstuch, Aaron

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

204192E, 156345, 156643, C23C 1500, C23F 100

Patent

active

043167918

ABSTRACT:
Apparatus for dry chemical etching caused by ion bombardment of a substrate placed in a vacuum chamber. The substrate is in contact with an electrode, connected to a high frequency bias voltage source having one terminal connected to a ground of the chamber. The etchants are produced in the form of plasma by an electrical discharge maintained in the chamber containing a gas or a suitable gaseous mixture. The plasma is produced by a microwave generator and the bias voltage by means of a high frequency source. The respective amplitudes and frequencies of the two sources enable the base of a groove on an electronic circuit to be etched without erosion of the groove.

REFERENCES:
patent: 4160690 (1979-07-01), Shibagaki et al.
patent: 4222838 (1980-09-01), Bhagat et al.
patent: 4229233 (1980-10-01), Hansen et al.
patent: 4233109 (1980-11-01), Nishizawa
patent: 4253907 (1981-03-01), Parry et al.
B. N. Chapman et al., "Triode System for Plasma Etching", IBM Tech. Disc. Bull., vol. 21, p. 1197, (1978).
S. Bhattacharaya, "System for Varying the Directionality in Plasma Etching", IBM Tech. Disc. Bull., vol. 20, p. 991, (1977).
B. N. Chapman, "Plasma Etching of a Positively Biased Wafer", IBM Tech. Disc. Bull., vol. 22, pp. 1175-1176, (1979).

Affiliated with

Also associated with

Rating

Device for chemical dry etching of integrated circuits does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Device for chemical dry etching of integrated circuits, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Device for chemical dry etching of integrated circuits will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1773194