Device for cathodic sputtering at a high deposition rate

Details Device for cathodic sputtering at a high deposition rate Device for cathodic sputtering at a high deposition rate

1976-09-13

1978-06-13

Weisstuch, Aaron

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

C23C 1500

Patent

active

040947645

ABSTRACT:
The target of a device for cathodic sputtering at a high deposition rate on a substrate placed within a pumped enclosure is brought to a negative potential with respect to an anode. A gas is admitted at a pressure P into the space formed between the target and the anode, a high gas-pressure gradient being established between the target and the substrate. A magnetic field H is produced in a direction parallel to the target surface located opposite to the substrate and a suppressor screen is placed around the target.

REFERENCES:
patent: 3629095 (1971-12-01), Jackson et al.
patent: 3669860 (1972-06-01), Knowles et al.
patent: 3669861 (1972-06-01), Cash, Jr. et al.
patent: 3830721 (1974-08-01), Gruen et al.
patent: 3884793 (1975-05-01), Penfold et al.
patent: 3922214 (1975-11-01), VanCakenberghe
R. W. Berry et al., "Thin Film Technology," Van Nostrand Reinhold, N.Y., 1968, pp. 230-231.

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