Device for biasing an RF device operating in quasi-linear modes

Miscellaneous active electrical nonlinear devices – circuits – and – External effect – Temperature

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327575, 327482, 327483, 327530, 327535, 330289, 330296, 330297, H03K 342, H03K 1760, G05F 110, H03F 304

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active

054225221

ABSTRACT:
A biasing device which is in thermal contact with an RF device for actively biasing the RF device operating in quasi-linear modes. The biasing device provides a low impedance current source with high current capability to the base of the RF device. The biasing device includes three specially-processed transistors. The second and third transistors are connected such that their base-emitter and base-collector junctions are in parallel effectively forming two exceptionally low turn on series diodes. The result of reducing the resistances of the second and third transistors, by configuration and processing, is that they turn on slightly before the RF device is biased to its quiescent point.

REFERENCES:
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patent: 4663599 (1987-05-01), Patch
patent: 4924194 (1990-05-01), Opas et al.
patent: 5160898 (1992-11-01), Black
Gunther, "Low Impedance, Temperature Compensated Bias Supply", Motorola Technical Disclosure Bulletin, vol. 3, (1983), p. 20.
Helge Granberg, "Biasing Solid State Amplifiers to Linear Operation", RF amplifiers, pp. 72-76, Apr. 1991.
Bruce Utter, Application Note for Z0-28 Communications Transistor Corporation: Application Note for Z0-028, Acrian Power Solutions (Jan. 1989).

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