Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2008-10-01
2011-10-04
Smith, Matthew (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S012000, C257SE21090, C438S024000, C438S478000, C977S932000, C977S950000, C977S953000
Reexamination Certificate
active
08030729
ABSTRACT:
A device disclosed herein includes a first layer, a second layer, and a first plurality of nanowires established between the first layer and the second layer. The first plurality of nanowires is formed of a first semiconductor material. The device further includes a third layer, and a second plurality of nanowires established between the second and third layers. The second plurality of nanowires is formed of a second semiconductor material having a bandgap that is the same as or different from a bandgap of the first semiconductor material.
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Kamins Theodore I.
Quitoriano Nathaniel
Enad Christine
Hewlett--Packard Development Company, L.P.
Smith Matthew
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