Device for absorbing or emitting light and methods of making...

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

Reexamination Certificate

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C257S012000, C257SE21090, C438S024000, C438S478000, C977S932000, C977S950000, C977S953000

Reexamination Certificate

active

08030729

ABSTRACT:
A device disclosed herein includes a first layer, a second layer, and a first plurality of nanowires established between the first layer and the second layer. The first plurality of nanowires is formed of a first semiconductor material. The device further includes a third layer, and a second plurality of nanowires established between the second and third layers. The second plurality of nanowires is formed of a second semiconductor material having a bandgap that is the same as or different from a bandgap of the first semiconductor material.

REFERENCES:
patent: 7202173 (2007-04-01), Hantschel et al.
patent: 7608530 (2009-10-01), Kobayashi et al.
patent: 2005/0009224 (2005-01-01), Yang
patent: 2006/0207647 (2006-09-01), Tsakalakos et al.
patent: 2007/0041301 (2007-02-01), Kurt et al.
patent: 2007/0047056 (2007-03-01), Kempa
patent: 2008/0073743 (2008-03-01), Alizadeh et al.
patent: 2008/0116465 (2008-05-01), Moon et al.
patent: 2008/0156366 (2008-07-01), Kim et al.
patent: 2009/0294755 (2009-12-01), Kuekes et al.
patent: WO 2004055786 (2004-07-01), None

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