Fishing – trapping – and vermin destroying
Patent
1989-11-30
1992-04-21
Wilczewski, Mary
Fishing, trapping, and vermin destroying
437 24, 437 81, 437935, 437936, 148DIG26, 148DIG111, H01L 21302
Patent
active
051067641
ABSTRACT:
Fine featured devices are produced by a series of fabrication steps including exposing selective surface regions to irradiation, e.g. to an ion beam, generally to result in removal of masking material within irradiated regions. In most instances, subsequent etching is under conditions such that bared material is preferentially removed. Etch-removal and irradiation are such that overgrown material is of device quality at least in etched regions. The inventive process is of particular value in the fabrication of integrated circuits, e.g. circuits performing electronic and/or optical functions. The inventive process is expediently used in the fabrication of structures having minimum feature size of 1 micrometer and smaller. Patterning is dependent upon masking material of a maximum thickness of 100 .ANG..
REFERENCES:
patent: 4405710 (1983-09-01), Balasubramanyam et al.
patent: 4853341 (1989-08-01), Nishioka et al.
patent: 4876112 (1989-10-01), Kaito et al.
patent: 4897361 (1990-01-01), Harriott et al.
patent: 4933299 (1990-06-01), Durose
Wolf et al., Silicon Processing for the VLSI Era, Lattice Press, Sunset Beach, Calif., 1986, pp. 142-143 and 520.
Kato et al., "Submicron Pattern Fabrication by Focused Ion Beams", J. Vac. Sci. Technol., B3(1), Jan./Feb. 1985, pp. 50-53.
Morimoto et al., " . . . Field-Effect Transistor with . . . Exposure of Focused Ion Beams", J. Vac. Sci. Technol. B5(1), Jan./Feb. 1987, pp. 211-214.
Harriott et al., "Micromachining of Optical Structures with Focused Ion Beams", J. Vac. Sci. Technol. B5(1), Jan./Feb. 1987, pp. 207-210.
Kuwano et al., "Resist Patterning . . . Employing Focused Ion Beam Exposure . . . ", J. Voc. Sci. Technol. B3(5), Sep./Oct. 1985, pp. 1357-1361.
Narum et al., "A Variable Energy Focused Ion Beam System for In Situ Microfabrication", J. Vac. Sci. Technol. B6(3), May/Jun. 1988, pp. 966-973.
Harriott Lloyd R.
Panish Morton B.
Temkin Henryk
Wang Yuh-Lin
AT&T Bell Laboratories
Indig G. S.
Wilczewski Mary
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