Device fabrication

Details Device fabrication Device fabrication

1990-11-01

1994-02-22

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437107, 437133, 437946, 437105, 148DIG50, 148DIG110, H01L 21205

Patent

active

052886573

ABSTRACT:
Expedient fabrication of fine-featured integrated circuits entails aperture pattern delineation to produce a masking layer atop a semiconductor body followed by insertion within a controlled atmosphere chamber within which device-functional layered material is epitaxially grown within apertures. Critical, device-consequential properties of epitaxial material is assured by removal of a thin surface layer of material revealed during delineation. Such removal, sufficient to eliminate meaningful contamination and/or crystalline damage introduced during delineation, is of sufficiently small quantity as to be accommodated within the chamber. Under most circumstances, the controlled atmosphere is at reduced pressure as required for e.g. MOMBE epitaxial growth.

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