Device comprising multi-layered thin film having excellent...

Details Device comprising multi-layered thin film having excellent... Device comprising multi-layered thin film having excellent...

2005-10-14

2009-06-09

Hoang, Quoc D (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S766000, C257SE23017, C257SE23163

Reexamination Certificate

active

07545043

ABSTRACT:
A device comprises a multi-layered thin film having excellent adhesion due to the method of fabricating the same. More particularly, the device includes a multi-layered thin film consisting of a tantalum nitride layer, a tantalum layer formed on the tantalum nitride layer, and a gold thin film formed on the tantalum layer.

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