Device based on partially oxidized porous silicon and method...

Details Device based on partially oxidized porous silicon and method... Device based on partially oxidized porous silicon and method...

2004-10-15

2008-08-12

Le, Long V. (Department: 1641)

Chemistry: molecular biology and microbiology

Apparatus

Including measuring or testing

C385S012000, C385S129000, C385S146000, C702S019000, C435S006120, C435S007100, C435S287100, C435S288300, C436S164000, C436S172000, C422S091000, C422S068100

Reexamination Certificate

active

07410794

ABSTRACT:
Device having a flat macroporous support material made of silicon and having surfaces, a plurality of pores each having a diameter in a range of from 500 nm to 100 μm distributed over at least one surface region of the support material and extending from one surface through to the opposite surface of the support material, at least one region having one or more pores with SiO2 pore walls, and a frame of walls with a silicon core surrounding the at least one region and arranged essentially parallel to longitudinal axes of the pores and open towards the surfaces, wherein the silicon core merges into silicon dioxide over a cross section towards an outer side of the walls forming the frame.

REFERENCES:
patent: 3962052 (1976-06-01), Abbas et al.
patent: 4948214 (1990-08-01), Hamblen
patent: 5544772 (1996-08-01), Soave et al.
patent: 5843767 (1998-12-01), Beattie
patent: 5874047 (1999-02-01), Schoning et al.
patent: 5987208 (1999-11-01), Gruning et al.
patent: 7031566 (2006-04-01), Kochergin et al.
patent: 2001/0045613 (2001-11-01), Nagata
patent: 2002/0191884 (2002-12-01), Letant et al.
patent: 2004/0175710 (2004-09-01), Haushalter
patent: 2005/0054084 (2005-03-01), Lehmann
patent: 2005/0112652 (2005-05-01), Dertinger et al.
patent: 44 26 507 (1996-02-01), None
patent: WO0033976 (2000-06-01), None
patent: WO-01/24929 (2001-04-01), None
Lehmann, V. and Foll,H. “Formation Mechanism and Properties of Electrochemically Etched Trenches in n-Type Silicon,” J. Electrochem. Soc. vol. 137, No. 2, 1990.
U.S. Appl. No. 10/678,757, filed Oct. 2003, Dertinger et al.
G. Masini et al.; “Si based optoelectronics for communications”; Materials Science and Engineering B, Elsevier Sequoia, Lausanne, Switzerland, vol. 89, No. 1-3, Feb. 14, 2002, pp. 2-9.
A. Birner et al.; “Silicon-Based Photonic Crystals”; Advanced Materials, Wiley-VCH Verlag GmbH, Adv. Mater 2001, vol. 13, No. 6, Mar. 16, 2001, pp. 377-388.

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