Fishing – trapping – and vermin destroying
Patent
1991-08-23
1992-12-15
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437946, 148DIG115, H01L 2172
Patent
active
051717034
ABSTRACT:
Methods of forming a semiconductor substrate and a device oriented substantially along a crystal direction other than a crystal direction that falls along a cleavage plane and the substrate and device formed by each method are disclosed. An ingot of monocrystalline material is formed and marked to denote a crystal direction other than a crystal direction that falls along a cleavage plane. The ingot is lapped to form a semiconductor substrate having a mark denoting a crystal direction other than a crystal direction that falls along a cleavage plane. A device is formed on the semiconductor substrate having a monocrystalline layer, such that a field oxide-active area edge or a gate electrode lies substantially along a crystal direction other than a crystal direction that falls along a cleavage plane. The present invention may be used on any device where dislocation defects, a lateral diffusion, or a lateral oxidation is to be minimized.
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Dun Haiping
Giridhar Ragupathy V.
Lin Yi-Ching
Chaudhari C.
Hearn Brian E.
Intel Corporation
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