Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than...
Reexamination Certificate
2008-08-29
2010-12-28
Dang, Trung (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
C257SE29082, C257SE21051, C438S105000
Reexamination Certificate
active
07858990
ABSTRACT:
A graphene-based device is formed with a trench in one or more layers of material, a graphene layer within the trench, and a device structure on the graphene layer and within the trench. Fabrication techniques includes forming a trench defined by one or more layers of material, forming a graphene layer within the trench, and forming a device structure on the graphene layer and within the trench.
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Chen An
Krivokapic Zoran
Advanced Micro Devices , Inc.
Dang Trung
Ditthavong Mori & Steiner, P.C.
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