Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than...
Reexamination Certificate
2008-08-29
2010-12-28
Dang, Trung (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
C257SE29082, C257SE21051, C438S105000
Reexamination Certificate
active
07858989
ABSTRACT:
A graphene-based device is formed with a substrate having a trench therein, a device structure on the substrate and within the trench, a graphene layer over the device structure, and a protective layer over the graphene layer. Fabrication techniques include forming a trench in a substrate, forming a device structure within the trench, forming a graphene layer over the device structure, and forming a protective layer over the graphene layer.
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Chen An
Krivokapic Zoran
Dang Trung
Ditthavong Mori & Steiner, P.C.
GLOBALFOUNDRIES Inc.
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