Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having growth from a solution comprising a solvent which is...
Reexamination Certificate
2011-07-19
2011-07-19
Kunemund, Robert M (Department: 1714)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having growth from a solution comprising a solvent which is...
C117S073000, C117S074000, C117S013000, C164S122200
Reexamination Certificate
active
07981214
ABSTRACT:
In the case of a device for the melting and/or crystallizing of non-ferrous metals, especially of silicon, provision is made, for improving the quality of the crystallized and block-shaped non-ferrous metal, for there to be arranged around a container for receiving the non-ferrous metal at least one controllable cooling element for the active removal of heat from the non-ferrous metal.
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Geyer Bert
Ghosh Michael
Müller Armin
Seidel Jens
Deutsche Solar GmbH
Kunemund Robert M
McGlew and Tuttle , P.C.
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