Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2008-05-27
2008-05-27
Elms, Richard T. (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S198000, C365S201000
Reexamination Certificate
active
11274483
ABSTRACT:
The invention relates to a procedure and a device for measuring memory cell currents, in particular for non-volatile memory components, where the device has a current mirroring device for mirroring a current flowing through a memory cell when it is being read, and delivering an analog current signal generated during the mirroring, or an analog current signal derived from it, to an analog output pad of a memory component.
REFERENCES:
patent: 5889702 (1999-03-01), Gaultier et al.
patent: 5986937 (1999-11-01), Yero
patent: 6219277 (2001-04-01), Devin et al.
patent: 6229296 (2001-05-01), Duesman
patent: 6480421 (2002-11-01), Osama
patent: 6836443 (2004-12-01), Dadashev
patent: 10135775 (2004-02-01), None
patent: 10-0239729 (1998-11-01), None
Paparisto Edvin
Rogl Stephan
Elms Richard T.
Infineon - Technologies AG
Le Toan
Slater & Matsil L.L.P.
LandOfFree
Device and procedure for measuring memory cell currents does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Device and procedure for measuring memory cell currents, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Device and procedure for measuring memory cell currents will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3944335