Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2006-10-24
2006-10-24
Wells, Nikita (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S491100, C250S492210, C250S492230
Reexamination Certificate
active
07126139
ABSTRACT:
A device and a method for positionally accurate implantation of individual particles in a substrate surface (1a) are described. A diaphragm for a particle beam to be directed onto the substrate surface (1a) and a detector provided thereon in the form of a p-n junction for determining a secondary electron flow produced upon impact of a particle onto the substrate surface (1a) are provided on a tip (4) which is formed on a free end portion of a flexible arm (2) to be mounted on one side. The device is part of a scanning device operating according to the AFM method.
REFERENCES:
patent: 2002/0076184 (2002-06-01), Iyoki
patent: WO 02/077986 (2002-10-01), None
patent: WO 03/019635 (2003-03-01), None
Luthi et al., “Parallel nanodevice fabrication using a combination of shadow mask and scanning probe methods,” Jun. 28, 1999, Applied Physics Letters, vol. 75, No. 9, Aug. 30, 1999, pp. 1314-1316.
Meijer Jan
Rangelow Ivo W.
Schenkel Thomas
Berkeley Lawrence
Chew Wong Michelle
National Laboratory
The Regents of the University of California
Vanore David A.
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