Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With specified electrode means
Patent
1994-09-12
1996-07-30
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With specified electrode means
257197, 257383, 257770, A01L 27082
Patent
active
055414443
ABSTRACT:
A device having, at least, a first film having a surface on which neither a natural oxide film nor impurity grains caused by a resist residue is or are present, and a conductive material layer formed on a surface adjacent to the surface of the first film, wherein an insulative compound film is formed on a surface of the conductive material layer by a surface reaction with the conductive material layer, and a predetermined second film required for an arrangement is formed on the surface of the first film.
REFERENCES:
patent: 3398335 (1968-08-01), Dill, Jr.
patent: 3823349 (1974-07-01), Dhaka et al.
patent: 4157269 (1979-06-01), Ning et al.
patent: 4441247 (1984-04-01), Gargini et al.
patent: 4460417 (1984-07-01), Murase et al.
patent: 4483726 (1984-11-01), Isaac et al.
patent: 4495512 (1985-01-01), Isaac et al.
patent: 4789885 (1988-12-01), Brighton et al.
patent: 4882294 (1989-11-01), Christenson
patent: 4908324 (1990-03-01), Nihira et al.
patent: 4957874 (1990-09-01), Soejima
patent: 4977098 (1990-12-01), Yu et al.
Sopher, R. P., et al. "Metal Contacts to Semiconductor Devices" IBM Tech Disc Bull vol. 10, No. 2, Jul. 1967 pp. 158-59.
Miyawaki Mamoru
Ohmi Tadahiro
Canon Kabushiki Kaisha & Tadahiro Ohmi
Crane Sara W.
LandOfFree
Device and method of manufacturing the same and semiconductor de does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Device and method of manufacturing the same and semiconductor de, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Device and method of manufacturing the same and semiconductor de will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1661276