Device and method of manufacturing the same and semiconductor de

Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With specified electrode means

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257197, 257383, 257770, A01L 27082

Patent

active

055414443

ABSTRACT:
A device having, at least, a first film having a surface on which neither a natural oxide film nor impurity grains caused by a resist residue is or are present, and a conductive material layer formed on a surface adjacent to the surface of the first film, wherein an insulative compound film is formed on a surface of the conductive material layer by a surface reaction with the conductive material layer, and a predetermined second film required for an arrangement is formed on the surface of the first film.

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Sopher, R. P., et al. "Metal Contacts to Semiconductor Devices" IBM Tech Disc Bull vol. 10, No. 2, Jul. 1967 pp. 158-59.

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