Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k
Patent
1989-04-14
1992-04-14
James, Andrew J.
Superconductor technology: apparatus, material, process
High temperature , per se
Having tc greater than or equal to 150 k
357 5, 505702, H01B 1200
Patent
active
051048485
ABSTRACT:
A device comprising semiconductor elements and conductor tracks of an oxidic superconducting material, electrically conductive connections being formed between semiconductor elements and conductor tracks, is provided with an electrically conductive antidiffusion layer between the semiconductor elements and the conductor tracks. The antidiffusion layer is composed of an amorphous alloy having the composition A.sub.x E.sub.1-x, wherein A is selected from one or more of the elements Zr, Nb, Mo, Ru, Rh, Pd, Hf, Ta, W, Re, Os, Ir and Pt, wherein E is selected from one or more of the elements B, Si, Al, Ga and Ge, and wherein x has a value of from 0.7 to 0.95.
REFERENCES:
patent: 4454522 (1984-06-01), De Lozanne
patent: 4470190 (1984-09-01), Fulton et al.
patent: 4837609 (1989-06-01), Gurvitch et al.
R. F. Broom and W. Water, Planarized Structure for Josephson Tunnel Junctions, Mar. 1984, IBM Technical Disclosure Bulletin vol. 26 N. 10A.
Duchateau Johan P. W. B.
Miedema Andries R.
Van der Kolk Gerrit J.
Dang Hung Xuan
James Andrew J.
Spain Norman N.
U.S. Philips Corporation
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