Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k
Patent
1989-02-27
1991-09-17
James, Andrew J.
Superconductor technology: apparatus, material, process
High temperature , per se
Having tc greater than or equal to 150 k
505874, 505702, 357 5, H01B 1200
Patent
active
050495437
ABSTRACT:
A device comprising semiconductor elements and conductor tracks of an oxidic superconductive material, electrically conductive connections being established between the semiconductor elements and the conductor tracks, is provided with an electrically conductive antidiffusion layer between the semiconductor elements and the conductor tracks. The antidiffusion layer consists of an amorphous alloy of two transition metals, which alloy has a crystallization temperature of at least 900 K. The amorphous alloy has the composition A.sub.x B.sub.1-x, wherein A is selected from Ti, Zr, Hf, Nb and Ta, wherein B is selected from Ir, Pd and Pt, and wherein x has a value from 0.4 to 0.8.
REFERENCES:
patent: 4319256 (1982-03-01), Tarutani et al.
patent: 4432134 (1984-02-01), Jones et al.
patent: 4470190 (1984-09-01), Fulton et al.
IBM Technical disclosure bulletin, vol. 26, No. 10A, Mar./84, Planarized Structure for Josephson Tunnel Junction, R. F. Broom et al.
Baller Theunis S.
Dam Bernard
De Reus Roger
Saris Frans W.
Van der Kolk Gerrit J.
Fox John C.
Hung Dang Xuan
James Andrew J.
U.S. Philips Corporation
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