Device and method of forming a metal to metal capacitor within a

Details Device and method of forming a metal to metal capacitor within a Device and method of forming a metal to metal capacitor within a

1997-08-12

2000-03-21

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257532, H01L 2900

Patent

active

06040616&

ABSTRACT:
The present invention provides, for use in an integrated circuit structure having a prior level that includes a foundation dielectric formed over a conductive polycrystalline material, a capacitor comprising first and second electrodes having a capacitor dielectric formed therebetween. The first electrode is formed immediately over the prior level and extends beyond a common area of the first and second electrodes and connects the capacitor to the prior level outside of the common area. The capacitor is free of a direct electrical contact with the prior level; that is, the capacitor is not connected to the prior level by a window or other interconnect structure that extends directly from the capacitor itself within the common area. Electrical connection of the capacitor to the prior level is made outside the common area of the capacitor.

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