Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1998-03-20
2000-11-28
Utech, Benjamin L.
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
117 34, 117217, C30B 1514, C30B 1522
Patent
active
061530085
ABSTRACT:
Device for pulling a silicon single crystal 1 includes an element 5 which annularly surrounds the single crystal growing at a crystallization boundary; and the element has a face 6 directed at the single crystal. The element surrounds the single crystal substantially level with the crystallization boundary 2 and has the property of reflecting heat radiation radiated by the single crystal and the similar melt or of generating and radiating heat radiation back to the lower part of the crystal close to the crystallization boundary. There is also a method for pulling a silicon single crystal, in which the single crystal is thermally affected using the element surrounding it.
REFERENCES:
patent: 5441014 (1995-08-01), Tomioka et al.
patent: 5487354 (1996-01-01), von Ammon et al.
patent: 5567399 (1996-10-01), Von Ammon et al.
von Ammon, Wilfried et al., "The dependence of bulk defects on the axial perature gradient of silicon crystals during Czochralski growth", vol. 151 No. 3/4 (Jun. 1995): 273-277.
Dornberger, Erich et al., "The dependence of ring-like distributed stacking faults on the axial temperature gradient of growing Czochralski crystals", vol. 143 No. 5 (May 1996): 1648-53.
Ammon Wilfried Von
Dornberger Erich
Olkrug Hans
Segieth Franz
Champagne Donald L.
Utech Benjamin L.
Wacker Siltronic Gesellschaft fur Halbleitermaterialien AG
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