Device and method for providing optical bistability with free ca

Details Device and method for providing optical bistability with free ca Device and method for providing optical bistability with free ca

1987-11-25

1989-01-03

LaRoche, Eugene R.

Fishing, trapping, and vermin destroying

437 24, G02B 523

Patent

active

047952415

ABSTRACT:
In a semiconductor layer which has in a semiconductor bistable etalon a refractive index variable, as a result of absorption by excitons, with the intensity of an optical beam incident thereon, an optical guide for the optical beam is surrounded by a cladding portion including atoms which reduce the refractive index in the cladding portion relative to the optical guide and serve as recombination centers for free carries produced by decomposition of the excitons. The semiconductor layer may be either a superlattice layer, such as a GaAs-GaAlAs layer, or a bulk semiconductor layer, such as a GaAs layer. After forming the semiconductor layer on an etch-stop layer which is formed on a semiconductor substrate for chemical etch of the substrate for a window, the atoms are injected into the surrounding portion as by bombarding an exposed surface of the semiconductor layer by hydrogen ions with a mask selectively formed on the exposed area to cover an area contiguous on the exposed surface to a columnar portion which becomes the optical guide. The hydrogen ions automatically become the atoms of the above-described type in the surrounding portion.

REFERENCES:
"All-Optical GaAs Chip: Bistable at Room Temperature", Electro-Optical Systems Design, May 1982, p. 12.
Y. Silberberg & P. Smith, "Fast Nonlinear Optical Response from Proton-Bombarded Multiple Quantum Well Structures", Appl. Phys. Lett. 46(8), 15 Apr. 1985, pp. 701-703.

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