Coating processes – Direct application of electrical – magnetic – wave – or... – Chemical vapor deposition
Reexamination Certificate
2004-11-09
2011-11-08
Cleveland, Michael (Department: 1712)
Coating processes
Direct application of electrical, magnetic, wave, or...
Chemical vapor deposition
C427S595000, C427S248100
Reexamination Certificate
active
08053037
ABSTRACT:
A device for patterning structures on a substrate includes an imaging device having a scanning tip, a light emitting device, and a space around the scanning tip. The space comprises a vapor of a material which is suitable for Chemical Vapor Deposition onto the substrate when decomposed. The light emitting device is adapted to emit a light beam, which has an intensity not capable to decompose the vapor, onto the scanning tip in such a way that an electromagnetic field induced by the light beam near the scanning tip is high enough to decompose the vapor.
REFERENCES:
patent: 4550257 (1985-10-01), Binnig et al.
patent: 4873413 (1989-10-01), Uesugi et al.
patent: 5294465 (1994-03-01), Gallagher et al.
patent: 2002/0063212 (2002-05-01), Mirkin et al.
Jersch et al (Applied Physics A 64, 29-32 (1997)).
Asahino et al (Physical Review Letters, vol. 86(2001), No. 19, pp. 4334-4337).
Takahashi et al (Ultramicroscopy, vol. 82 (2000), pp. 63-68).
Jersch (Applied Physics A 66, 29-34 (1998).
Yau S T et al: “Laser-Assisted Deposition of Nanometer Structures Using a Scanning Tunneling Microscope” Applied Physics Letters, American Institute of Physics, New York, US, vol. 57, No. 27, Dec. 31, 1990, pp. 2913-2915 XP000222958 ISSN: 0003-6951 the whole document.
Shtokman M I: “Possibility of Laser Nanomodification of Surfaces by Means of a Scanning Tunneling Microscope” Optoelectron Instrum Data Process; Optoelectronics, Instrumentation and Data Processing (English Translation of Avtometriya) 1989, No. 3 1989 pp. 27-37, XP009043144 p. 27, paragraph 1 pp. 28-29 pp. 33-36.
Boneberg J, et al.: “Mechanism of Nanostructuring Upon Nanosecond Laser Irradiation of a STM Tip” Appl Phys A; Applied Physics A: Materials Science & Processing Oct. 1998 Springer-Verlag GMBH & Company KG, Berlin, Germany, vol. 67, No. 4, Oct. 1998, pp. 381-384, XP002315242 p. 381, right-hand column.
Nanostructuring with laser radiation in the nearfield of a tip from a scanning force microscope, Yau et al, Applied Physic Letters, vol. 164, No. 1 29032, Dec. 31, 1996.
Selective area oxidation of silicon with a scanning force mircoscope, H.C. Day, et al, Applied Physic Letters, vol. 62, 2691-2693, May 24, 1993.
Search report U.S. Appl. No. 10/595,434, for PCT/IB2004/003696 completed Jan. 27, 2005.
Yau S T et al: “Laser-Assisted Deposition of Nanometer Structures using a scanning tunneling microscope.” Applied Physics Letter, American Institute of Physics, New York, US, vol. 57, No. 27, Dec. 31, 1990, pp. 2913-2915, XP00222958, ISSN: 0003-6951.
Shtokman M I: “Possibility of Laser Nanomodification of surfaces by means of a scanning tunneling microscope” Optoelectron Instrum Data Process; Optoelectron Instrum Data Process; Optoelectronics, Instrumentation and Data Processing, 1989, No. 3, 1989 pp. 27-37, XP009043144, p. 27, Paragraph 1, pp. 28-29, pp. 33-36.
Boneberg J et al: “Mechanism of nanostructuring upon nanosecond laser irradiation of a STM tip” Appl Phys A; Applied Physics A: Materials Science and Processing Oct. 1998, Springer-Verlag GMBH & Company KG, Berlin, Germany, vol. 67, No. 4 , Oct. 1998, pp. 381-384, XP002315242, pp. 381, Right Hand Column.
Germann Roland
Karg Siegfried F.
Riel Heike E.
Riess Walter Heinrich
Schlittler Reto
Cai Yuanmin
Cleveland Michael
Horning Joel
International Business Machines - Corporation
LandOfFree
Device and method for patterning structures on a substrate does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Device and method for patterning structures on a substrate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Device and method for patterning structures on a substrate will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4266047