Device and method for multiplying capacitance

Details Device and method for multiplying capacitance Device and method for multiplying capacitance

1996-04-02

1999-04-13

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257393, 257271, H01L 2900

Patent

active

058941630

ABSTRACT:
A semiconductor device (400) and method are provided for multiplying a capacitance. A contact region (402) is formed in an island in a semiconductor substrate (499) bounded by an isolation region (403), producing the capacitance at the junction of the contact region (402). A dielectric layer (404) is formed over the semiconductor substrate (499) adjacent to the contact region (402). A contact layer (408) is formed over the dielectric layer (404) wherein an inversion layer (406) is formed under the contact layer (408), producing an inversion capacitance in response to an enabling signal. The inversion capacitance corresponds to a multiple of the capacitance.

REFERENCES:
patent: 5606197 (1997-02-01), Johansson et al.

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