Measuring and testing – Gas analysis – By thermal property
Reexamination Certificate
1999-04-28
2001-12-04
Williams, Hezron (Department: 2856)
Measuring and testing
Gas analysis
By thermal property
C073S025010, C073S031010, C062S639000, C062S924000, C374S159000
Reexamination Certificate
active
06324894
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a quantitative measuring method of argon impurity contained in high purity oxygen and cryostat employed in the above method and more particularly, to a quantitative measuring method of argon impurity by means of a triple point and a temperature at &ggr;-&bgr; phase transition of the high purity oxygen and cryostat employed in the above method.
2. Description of the Prior Art
Generally, a purity of the high purity oxygen is determined by quantitative analysis of impurity using chemical analysis method. Currently, the high purity oxygen having the purity of 99.998% is commonly used.
The conventional chemical analysis method is usually performed by a mass measurement method using gas mass apparatus. And in this case, the chemical analysis apparatus using mass difference of an ionized gas, etc. measures a content of the impurity accurately.
However, because oxygen and argon have similar chemical properties (polarity, etc.), the signals of both gases are overlapped in case of using the conventional analysis method. Hence, the conventional analysis has a decisive shortcoming that a content of argon impurity is not accurately measured. Accordingly, it is required to provide a more accurate measurement method of argon impurity contained in high purity oxygen. And for the purpose of measuring argon impurity accurately, the signal of oxygen should be separated from that of argon.
SUMMARY OF THE INVENTION
In order to solve the aforementioned problem, the inventor et al have conducted intensive studies on the method of measuring argon impurity contained in high purity oxygen employing triple point and &ggr;-&bgr; phase transition of oxygen and as a result, completed this invention.
Accordingly, it is a primary object of the present invention to provide a quantitative measuring method of argon impurity contained in high purity oxygen by means of triple point and &ggr;-&bgr; phase transition of oxygen.
It is a further object of the present invention to provide a cryostat employed for quantitative measuring of argon impurity contained in high purity oxygen.
REFERENCES:
patent: 4451273 (1984-05-01), Cheng et al.
patent: 54157669-A (1979-12-01), None
Journal of Research of the National Bureau of Standards, vol. 91, No. 5, “The Triple Point of Oxygen in Sealed Transportable Cells”, Furukawa, pp. 255-275, Sep.-Oct. 1986.
Advances in Cryogenic Engineering, vol. 33, “Evidence of Unreliability of Factory Analysis”, Pavese et al., pp. 1039-1043, Jan. 1988.
Gam Kee-Sool
Kang Kee-Hoon
Kim Yong-Gyoo
Song Chang-Ho
Cygan Michael
Finnegan Henderson Farabow Garrett & Dunner LLP
Korea Research Institute of Standards and Science
Williams Hezron
LandOfFree
Device and method for measuring argon impurity by utilizing... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Device and method for measuring argon impurity by utilizing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Device and method for measuring argon impurity by utilizing... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2596690