Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2006-01-24
2006-01-24
Lee, John R. (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S397000, C250S398000, C250S492100, C250S492200, C250S492300
Reexamination Certificate
active
06989545
ABSTRACT:
The present invention facilitates semiconductor device fabrication by obtaining angle of incidence values and divergence of an ion beam normal to a plane of a scanned beam. A divergence detector comprising a mask and profiler/sensor is employed to obtain beamlets from the incoming ion beam and then to measure beam current at a number of vertical positions. These beam current measurements are then employed to provide the vertical angle of incidence values, which provide a vertical divergence profile that serves to characterize the ion beam. These values can be employed by an ion beam generation mechanism to perform adjustments on the generated ion beam or position of the workpiece if the values indicate deviation from desired values.
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Brown Douglas A.
Rathmell Robert D.
Ray Andrew M.
Axcelis Technologies Inc.
Eschweiler & Associates LLC
Lee John R.
Souw Bernard E.
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