Device and method for limiting Di/Dt caused by a switching...

Details Device and method for limiting Di/Dt caused by a switching... Device and method for limiting Di/Dt caused by a switching...

2011-08-16

2011-08-16

Nguyen, Hai L (Department: 2816)

Miscellaneous active electrical nonlinear devices, circuits, and

Gating

Accelerating switching

C327S380000

Reexamination Certificate

active

07999600

ABSTRACT:
A circuit for limiting di/dt caused by a main switching FET during its turn-off against an inductive switching circuit is proposed. The circuit for limiting di/dt includes an auxiliary inductor in series with the main switching FET for inducing an auxiliary inductive voltage proportional to di/dt; an auxiliary FET in parallel with the main switching FET; the auxiliary FET gate is connected to produce a gate voltage equal to the auxiliary inductive voltage. When the di/dt tends to exceed a predetermined maximum rate of decrease the auxiliary FET produces an auxiliary current component counteracting further decrease of the di/dt. The main switching FET and the auxiliary FET can be formed from a single die with shared source and drain; the auxiliary inductor can be implemented as a parasitic inductance of an inherently required bonding wire connecting the main switching FET to its device terminal to simplify packaging with reduced cost.

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