Device and method for high performance high voltage operation

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With light activation

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257500, 257501, 257139, 257140, 257701, 257783, 257736, 257748, H03K 1708, H03K 17689, H01L 2702

Patent

active

054060966

ABSTRACT:
A high voltage device (10) having MOS input characteristics. A low voltage MOS transistor (12) is provided which has a source (18), a drain (22), and a gate (25). A high voltage transistor (14) is also provided which has a source (20), a drain (24), and gate (16). The source (18) of the low voltage MOS transistor (12) is connected to the gate (16) of the high voltage transistor (14). The drain (22) of the low voltage MOS transistor (12)is connected to the source (20)of the high voltage transistor The low voltage MOS transistor (12) may have a silicon substrate and the substrate of the high voltage transistor (14)may comprise silicon, silicon carbide, or gallium arsenide.

REFERENCES:
patent: 3244948 (1966-04-01), Cooper
patent: 4450471 (1984-05-01), Wellhoefer et al.
patent: 4595847 (1986-06-01), Weir
patent: 5040043 (1991-08-01), Ohno et al.
J. W. Palmour, et al. "Characterization of Device Parameters In High-Temperature Metal-Oxide-Semiconductor field-effect transistors in .beta.-SiC Thin Films", 26 Apr. 1988, extracted from: J. Appl. Phys. 64(4), 15 Aug. 1988, pp. 2168-2177.
J. Haisma, et al. "Silicon-On-Insulator Wafer Bonding-Wafer Thinning Technological Evaluations", 20 May 1989, pp. 1426-1443.
R. D. Black, et al. "Silicon and Silicon Dioxide Thermal Bonding for Silicon-On-Insulator Applications", 8 Dec. 1987, extracted from: J. Appl. Phys. 63(8), 15 Apr. 1988, pp. 2773-2777.
Hiroshi Gotou, et al. "SOI-Device on Bonded Wafer", 25 Dec. 1988, pp. 407-418, extracted from: Fujitsu Scientific & Technical Journal vol. 24, No. 4.
Robert F. Davis, et al. "Thin Film Deposition and Microelectronic and Optoelectronic Device Fabrication and Characterization in Monocrystalline Alpha and Beta Silicon Carbide", extracted from: IEEE vol. 79, No. 5, May 1991, pp. 677-701.
K. Furukawa, et al. "Insulated-Gate and Junction-Gate FET's of CVD-Grown .beta.-SiC", extracted from: IEEE vol. EDL-8, No. 2, Feb. 1987, pp. 48-49.
K. Shibahara, et al. "Inversion-Type N-Channel MOSFET Using Antiphase-Domain Free Cubic-SiC Grown on Si(100)" extracted from: (1986 International) Conference on Solid State Device and Materials, Tokyo, 1986, pp. 717-720.
Semiconductor Devices, Physics and Technology S. M. Sze, 1985.
`The Switch and the Invertor`.
Semi Conductor Devices, S. M. Sze, 1985.

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