Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1998-09-17
2000-06-27
Utech, Benjamin L.
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
438710, 438711, 438714, 438723, 438729, H01L 21302
Patent
active
060806761
ABSTRACT:
A dry etch process is presented wherein a semiconductor substrate is introduced into a reaction chamber between a first electrode and a second electrode. The semiconductor substrate may be positioned on the first electrode. A main flow of gas that includes an argon flow at an argon flow rate and a fluorocarbon flow at a fluorocarbon flow rate is established into the reaction chamber. RF power at a low frequency may then be applied to the first electrode for creating a fluorine-deficient plasma. An oxide layer arranged above the semiconductor substrate is exposed to the fluorine-deficient plasma for etching, in a single step, a portion of the oxide layer.
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Gardner Mark I.
May Charles E.
Nguyen Thien T.
Advanced Micro Devices , Inc.
Daffer Kevin L.
Tran Binh X
Utech Benjamin L.
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