Device and approach for integration of optical devices and...

Optical waveguides – Integrated optical circuit

Reexamination Certificate

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C385S130000, C385S131000, C438S029000, C438S031000, C438S041000, C216S002000, C257S432000

Reexamination Certificate

active

07418166

ABSTRACT:
Optical devices having integrated waveguide and active areas are realized using a crystallization approach involving the inhibition of defects typically associated with liquid-phase crystalline growth of lattice mismatched materials. According to one example embodiment, a growth region is formed such that the region is isolated from a silicon portion of silicon material. The region extends from a silicon-based seeding area of the substrate. A semiconductor material is deposited on a Silicon-based seeding area and in the growth region. A single crystalline material is formed from the deposited semiconductor material by heating and cooling the deposited semiconductor material while directing growth of the semiconductor material from the Silicon-based seeding area and through an opening sufficiently narrow to mitigate crystalline defects. A light-communicating device is formed by etching the silicon material over an insulator layer and etching the single crystalline material.

REFERENCES:
patent: 5013682 (1991-05-01), Plumton et al.
patent: 2006/0124919 (2006-06-01), Harris, Jr. et al.
patent: 2007/0087507 (2007-04-01), Liu et al.
patent: 2007/0104441 (2007-05-01), Ahn et al.
patent: WO2005/094254 (2005-10-01), None
Yaocheng Liu, Michael D. Deal and James D. Plummer, “High-quality single-crystal Ge on insulator by liquid-phase epitaxy on Si substrates.”Applied Physics Letters84 (2004), p. 2563-2565.

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