Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1996-12-05
1998-06-02
Bueker, Richard
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117 88, 117103, 117951, 118724, 118725, 118730, C23C 1600
Patent
active
057592632
ABSTRACT:
A device for epitaxially growing objects by Chemical Vapour Deposition on a substrate (1) comprises a susceptor (4) having a room (6) for receiving the substrate and means (9) for heating the susceptor and thereby the substrate and a gas mixture to be fed to the substrate for said growth. The substrate is arranged close to a first susceptor wall part (7) at least partially delimiting said room. Said heating means is arranged to heat the susceptor to a higher temperature of at least a second wall part (5) delimiting said room thereof and located substantially opposite to said first wall part than the temperature of the first wall part for obtaining a temperature gradient from said second wall part to the substrate and radiative heating thereof by said second wall part. (FIG. 1).
REFERENCES:
patent: 5108540 (1992-04-01), Frijlink
Nordell et al., Design and Performance of a New Reactor Vopor Phase Epitaxy of 3C, 6H and 4H SiC, J. Electrochem. Soc., vol. 143, No. 9, Sept. 1996, pp. 2910-2919.
Chinoy et al., The Effect of Wall HJeating in Horizontal Organometallic Vapor Phase Epitaxal Reactors, J., Electrochem. Soc., vol. 138, No. 5, May 1991, pp. 1452-1455.
Frijlink, A New Versatile., Large Size MOVPE Reactor, Journal of Crystal Growth 93 (1988) pp. 207-215.
Holstein et al., Effect of Buoyancy forces and Reactor Orientation on Fluid Flow and Growth Rate Uniformity in Cold-Wall Channel CVD Reactors, Journal of Crystal Growth 94 (1989) pp. 145-158.
Palmateer et al., New OMVPE Reactor for Large Area Uniform Deposition of InP and Related alloys, Journal of Electronic materials, vol. 18, No. 5, 1989, pp. 645-649.
Nordell et al., Design and Performance of a New Reactor for Vapor Phase Epitaxy of 3C, 6H, and 4H SiC, J. Electrochem. Soc., vol. 143, No. 9, Sep. 1996, pp. 2910-2919.
Nordell Nils
Schoner Adolf
ABB Research Ltd.
Bueker Richard
LandOfFree
Device and a method for epitaxially growing objects by cvd does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Device and a method for epitaxially growing objects by cvd, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Device and a method for epitaxially growing objects by cvd will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1454614