Active solid-state devices (e.g. – transistors – solid-state diode – With specified dopant
Patent
1996-01-16
1999-02-16
Hardy, David B.
Active solid-state devices (e.g., transistors, solid-state diode
With specified dopant
257629, 438 38, H01L 2976
Patent
active
058723870
ABSTRACT:
Described are preferred processes for conditioning semiconductor devices with deuterium to improve operating characteristics and decrease depassivation which occurs during the course of device operation. Also described are semiconductor devices which can be prepared by such processes.
REFERENCES:
patent: 3849204 (1974-11-01), Fowler
patent: 3923559 (1975-12-01), Sinha
patent: 4113514 (1978-09-01), Pankove et al.
patent: 4151007 (1979-04-01), Levinstein et al.
patent: 4290825 (1981-09-01), Dearnaley et al.
patent: 4331486 (1982-05-01), Chenevas-Paule et al.
patent: 4620211 (1986-10-01), Baliga et al.
patent: 5059551 (1991-10-01), Chevallier et al.
patent: 5179029 (1993-01-01), Gottscho et al.
patent: 5248348 (1993-09-01), Miyachi et al.
patent: 5250446 (1993-10-01), Osawa et al.
patent: 5264724 (1993-11-01), Brown et al.
patent: 5571339 (1996-11-01), Ringel et al.
patent: 5693961 (1997-12-01), Hamada
Ganguly et al., "Light-induced defect densities in hydrogenated and deuterated amorphous silicon deposited at different substrate temperatures", Phys. Rev. B., vol. 49, No. 16 (1994).
Mikkelsen, Jr., Secondary Ion Mass Spectrometry Characterization of D.sub.2 O and H.sub.2 .sup.18 O Steam Oxidation of Silicon, Journal of Electronic Materials, 1982, pp. 541-558, vol. II, No. 3.
Heungsoo et al., The Effect of Annealing Treatment on the Distribution of Deuterium in Silicon and in Silicon/Silicon Oxide Systems, J. Electrochem. Soc., 1992, vol. 139, No. 7.
Myers et al., Interactions of deuterium with ion-irradiated SiO.sub.2 on Si, J. Appl. Phys., 1990, vol. 67, No. 9.
Saks et al., Time-dependence of the interface trap build-up in deuterium-annealed oxides after irradiation, Appl. Phys. Lett., 1992, vol. 61, No. 25.
Zavada, Optical Waveguides formed by deuterium passivation of acceptors in Si doped p-type GaAs epilayers, J. Appl. Phys., 1992, vol. 71, No. 9.
N. S. Saks and R. W. Rendell, "The Time-Dependence of Post-Irradiation Interface Trap Build-Up In Deuterium-Annealed Oxides", IEEE Transcation On Nuclear Science, vol. 39, No. 6, Dec., 1992.
Hess Karl
Lyding Joseph W.
Hardy David B.
The Board of Trustees of the University of Illinois
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