Deuterium sintering with rapid quenching

Details Deuterium sintering with rapid quenching Deuterium sintering with rapid quenching

1998-07-28

2000-06-06

Bowers, Charles

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Passivating of surface

257607, 257608, 257609, 257610, 257611, 257612, 438 38, 438 37, 438 36, 438 35, H01L 2976

Patent

active

060717513

ABSTRACT:
Channel-hot-carrier reliability can be improved by deuterium sintering. However, the benefits obtained by deuterium sintering can be greatly reduced or destroyed by thermal processing steps which break Si--H and Si--D bonds. A solution is to increase the deuterium concentration near the interface to avoid subsequent depletion of deuterium due to diffusion. By using a rapid quench of a sintered wafer, the deuterium concentration near the interface is increased, because the rapid quench impedes the ability of the deuterium to diffuse away from the gate oxide interface.

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