Deuterated direlectric and polysilicon film-based semiconductor

Details Deuterated direlectric and polysilicon film-based semiconductor Deuterated direlectric and polysilicon film-based semiconductor

1997-04-28

2000-02-08

Crane, Sara

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

257327, 257405, 257410, 257651, H01L 2358

Patent

active

060230932

ABSTRACT:
A semiconductor device and a method of manufacturing the semiconductor device. The device includes: (1) a substrate composed at least in part of silicon and (2) a film located over the substrate and having a substantial concentration of an isotope of hydrogen located in the film.

REFERENCES:
patent: 4268321 (1981-05-01), Meguro
patent: 4268951 (1981-05-01), Elliott et al.
patent: 4620211 (1986-10-01), Baliga et al.
patent: 5248348 (1993-09-01), Miyachi et al.
patent: 5264724 (1993-11-01), Brown et al.
patent: 5304830 (1994-04-01), Sato
patent: 5378541 (1995-01-01), Ihara et al.
patent: 5642014 (1997-06-01), Hillenius
patent: 5830575 (1998-11-01), Warren et al.
Sze, S.M., Physics of Semiconductor Devices, 2nd edition, John Wiley, 1981, p. 850.
I.C. Kizilyalli, J.W. Lyding and K. Hess, Deuterium Post-Metal Annealing of MOSFET's for Improved Hot Carrier Reliability, IEEE Electron Device Letters, vol. 18, No. 3, pp. 81-83 (Mar. 1997).

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