Deuterated bipolar transistor and method of manufacture thereof

Details Deuterated bipolar transistor and method of manufacture thereof Deuterated bipolar transistor and method of manufacture thereof

1997-04-28

1999-11-09

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

257 65, H01L 27082

Patent

active

059820209

ABSTRACT:
A bipolar transistor and a method of manufacturing the transistor. The transistor includes: (1) a substrate having a base region, an emitter region and a base-emitter junction between said base and emitter regions and (2) a substantial concentration of an isotope of hydrogen located in said biploar transistor.

REFERENCES:
patent: 4620211 (1986-10-01), Baliga et al.
patent: 5872387 (1999-02-01), Lyding et al.
Isik C. Kizilyalli amd Jeff D. Bude, Degradation of Gain in Bipoloar Transistor, IEEE Transactions on Electron Devices, vol. 41, No. 7, pp. 1083-1091 (Jul. 1994).

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