Determining threshold voltage distribution in flash memory

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

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C365S185240, C365S185110

Reexamination Certificate

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08077520

ABSTRACT:
Methods, apparatuses, and systems for comparing threshold voltages of a plurality of flash memory cells to a plurality of reference voltages. A number of flash memory cells having threshold voltages that fall within each bin of a plurality of bins is determined. The plurality of bins each represent a plurality of threshold voltage ranges. A threshold voltage distribution of the plurality of flash memory cells is calculated based at least in part on the number of flash memory cells that fall into each of the bins.

REFERENCES:
patent: 7746702 (2010-06-01), Cho et al.

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