Determining semiconductor characteristic

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2041293, G01N 2746, C25F 312

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active

041682122

ABSTRACT:
The electrochemical measuring technique of the present invention employs, as the barrier material, a concentrated electrolyte, which also forms a medium for the controlled dissolution of a surface of the semiconductor so as to provide a continuous depth profile. The depth profile characteristic may be determined by capacitance-voltage measurements on n-type bulk GaAs, using KOH as the electrolyte.

REFERENCES:
patent: 3117899 (1964-01-01), McLouski
patent: 3303109 (1967-02-01), Just
patent: 3660250 (1972-05-01), Duffy et al.
patent: 3755026 (1973-08-01), Reynolds
"Journal of Applied Electrochemistry", 1973, vol. 3, pp. 1-15.
"J. Phys. E. Sci. Instrum.", 1971, vol. 4, pp. 213-221.
"IEEE Trans. Electron Devices", 1969, Ed.-16, pp. 445-449.

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