Determining profile parameters of a structure formed on a...

Details Determining profile parameters of a structure formed on a... Determining profile parameters of a structure formed on a...

2011-03-22

2011-03-22

Cosimano, Edward R (Department: 2857)

Data processing: measuring, calibrating, or testing

Measurement system

Measured signal processing

C356S237100, C356S237200, C356S237500, C356S445000, C356S446000, C378S070000, C378S086000, C382S141000, C438S014000, C700S121000, C702S040000, C702S081000

Reexamination Certificate

active

07912679

ABSTRACT:
An optical metrology model is created for a structure formed on a semiconductor wafer. The optical metrology model comprises one or more profile parameters, one or more process parameters, and dispersion. A dispersion function is obtained that relates the dispersion to at least one of the one or more process parameters. A simulated diffraction signal is generated using the optical metrology model and a value for the at least one of the process parameters and a value for the dispersion. The value for the dispersion is calculated using the value for the at least one of the process parameter and the dispersion function. A measured diffraction signal of the structure is obtained. The measured diffraction signal is compared to the simulated diffraction signal. One or more profile parameters of the structure and one or more process parameters are determined based on the comparison of the measured diffraction signal to the simulated diffraction signal.

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U.S. Appl. No. 11/858,058, filed Sep. 19, 2007 for Li, et al.

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