Determining profile parameters of a structure formed on a...

Data processing: measuring – calibrating – or testing – Measurement system – Measured signal processing

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C356S237100, C356S237200, C356S237500, C356S445000, C356S446000, C378S070000, C378S086000, C382S141000, C438S014000, C700S121000, C702S040000, C702S081000

Reexamination Certificate

active

07912679

ABSTRACT:
An optical metrology model is created for a structure formed on a semiconductor wafer. The optical metrology model comprises one or more profile parameters, one or more process parameters, and dispersion. A dispersion function is obtained that relates the dispersion to at least one of the one or more process parameters. A simulated diffraction signal is generated using the optical metrology model and a value for the at least one of the process parameters and a value for the dispersion. The value for the dispersion is calculated using the value for the at least one of the process parameter and the dispersion function. A measured diffraction signal of the structure is obtained. The measured diffraction signal is compared to the simulated diffraction signal. One or more profile parameters of the structure and one or more process parameters are determined based on the comparison of the measured diffraction signal to the simulated diffraction signal.

REFERENCES:
patent: 3357557 (1967-12-01), Austin
patent: 3430055 (1969-02-01), Metzger
patent: 3479506 (1969-11-01), Dorfler
patent: RE26916 (1970-06-01), Austin
patent: 3549999 (1970-12-01), Norton
patent: 6704661 (2004-03-01), Opsal et al.
patent: 6778911 (2004-08-01), Opsal et al.
patent: 6785638 (2004-08-01), Niu et al.
patent: 6891626 (2005-05-01), Niu et al.
patent: 6931361 (2005-08-01), Opsal et al.
patent: 6943900 (2005-09-01), Niu et al.
patent: 6947850 (2005-09-01), Opsal et al.
patent: 7031848 (2006-04-01), Opsal et al.
patent: 7065423 (2006-06-01), Prager et al.
patent: 7072049 (2006-07-01), Niu et al.
patent: 7092110 (2006-08-01), Balasubramanian et al.
patent: 7145664 (2006-12-01), Opsal et al.
patent: 7171284 (2007-01-01), Vuong et al.
patent: 7221989 (2007-05-01), Prager et al.
patent: 7224471 (2007-05-01), Bischoff et al.
patent: 7302367 (2007-11-01), Li et al.
patent: 7327475 (2008-02-01), Chu et al.
patent: 7330279 (2008-02-01), Vuong et al.
patent: 7355728 (2008-04-01), Li et al.
patent: 7388677 (2008-06-01), Vuong et al.
patent: 7474420 (2009-01-01), Li et al.
patent: 7515282 (2009-04-01), Li et al.
patent: 7522294 (2009-04-01), Chu et al.
patent: 7523076 (2009-04-01), Drege et al.
patent: 7526354 (2009-04-01), Madriaga et al.
patent: 7567353 (2009-07-01), Bischoff et al.
patent: 7571074 (2009-08-01), Funk et al.
patent: 7596422 (2009-09-01), Chard et al.
patent: 7598099 (2009-10-01), Bischoff et al.
patent: 7616325 (2009-11-01), Vuong et al.
patent: 7617075 (2009-11-01), Li et al.
patent: 7627392 (2009-12-01), Liu et al.
patent: 7636649 (2009-12-01), Li et al.
patent: 7667858 (2010-02-01), Chard et al.
patent: 7728976 (2010-06-01), Bischoff et al.
patent: 7729873 (2010-06-01), Liu et al.
patent: 2003/0028358 (2003-02-01), Niu et al.
patent: 2003/0204326 (2003-10-01), Opsal et al.
patent: 2004/0017574 (2004-01-01), Vuong et al.
patent: 2004/0017575 (2004-01-01), Balasubramanian et al.
patent: 2004/0122599 (2004-06-01), Opsal et al.
patent: 2004/0150838 (2004-08-01), Niu et al.
patent: 2004/0210402 (2004-10-01), Opsal et al.
patent: 2004/0233462 (2004-11-01), Opsal et al.
patent: 2004/0267397 (2004-12-01), Doddi et al.
patent: 2005/0088665 (2005-04-01), Bischoff et al.
patent: 2005/0192914 (2005-09-01), Drege et al.
patent: 2005/0209816 (2005-09-01), Vuong et al.
patent: 2005/0251350 (2005-11-01), Opsal et al.
patent: 2006/0009872 (2006-01-01), Prager et al.
patent: 2006/0247816 (2006-11-01), Prager et al.
patent: 2006/0290947 (2006-12-01), Li et al.
patent: 2007/0002337 (2007-01-01), Li et al.
patent: 2007/0225940 (2007-09-01), Li et al.
patent: 2007/0229855 (2007-10-01), Li et al.
patent: 2008/0007740 (2008-01-01), Vuong et al.
patent: 2008/0009081 (2008-01-01), Madriaga et al.
patent: 2008/0013107 (2008-01-01), Chard et al.
patent: 2008/0071504 (2008-03-01), Li et al.
patent: 2008/0170241 (2008-07-01), Chard et al.
patent: 2008/0170242 (2008-07-01), Chard et al.
patent: 2008/0183411 (2008-07-01), Funk et al.
patent: 2008/0195342 (2008-08-01), Li et al.
patent: 2008/0212080 (2008-09-01), Chu et al.
patent: 2008/0241974 (2008-10-01), Bischoff et al.
patent: 2008/0241975 (2008-10-01), Bischoff et al.
patent: 2008/0243730 (2008-10-01), Bischoff et al.
patent: 2008/0285054 (2008-11-01), Vuong et al.
patent: 2009/0063075 (2009-03-01), Liu et al.
patent: 2009/0063076 (2009-03-01), Liu et al.
patent: 2009/0063077 (2009-03-01), Liu et al.
patent: 2009/0076782 (2009-03-01), Li et al.
patent: 2009/0082993 (2009-03-01), Li et al.
patent: 2009/0118857 (2009-05-01), Bischoff et al.
patent: 2010/0245807 (2010-09-01), Li et al.
patent: WO 2007/123696 (2007-11-01), None
U.S. Appl. No. 11/858,058, filed Sep. 19, 2007 for Li, et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Determining profile parameters of a structure formed on a... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Determining profile parameters of a structure formed on a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Determining profile parameters of a structure formed on a... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2618966

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.