Computer-aided design and analysis of circuits and semiconductor – Design of semiconductor mask or reticle – Manufacturing optimizations
Reexamination Certificate
2008-12-14
2011-11-08
Dinh, Paul (Department: 2825)
Computer-aided design and analysis of circuits and semiconductor
Design of semiconductor mask or reticle
Manufacturing optimizations
C716S055000
Reexamination Certificate
active
08056026
ABSTRACT:
The manufacturability of a lithographic mask employed in fabricating instances of a semiconductor device is determined. Target edges are selected from mask layout data of the lithographic mask. The mask layout data includes polygons distributed over cells, where each polygon has edges. The cells include a center cell, two vertical cells above and below the center cell, and two horizontal cells to the left and right of the center cell. Target edge pairs are selected for determining a manufacturing penalty in making the lithographic mask, in a manner that decreases the computational volume in determining the manufacturing penalty. The manufacturability of the lithographic mask, including the manufacturing penalty in making the lithographic mask, is determined based on the target edge pairs selected. The manufacturability of the lithographic mask is output. The manufacturability of the lithographic mask is dependent on the manufacturing penalty in making the lithographic mask.
REFERENCES:
patent: 6563566 (2003-05-01), Rosenbluth et al.
patent: 7057709 (2006-06-01), Rosenbluth
patent: 2003/0208742 (2003-11-01), LaCour
patent: 2007/0266346 (2007-11-01), Wu
patent: 2010/0146465 (2010-06-01), Berkens et al.
A.E. Rosenbluth et al., “Optimum mask and source patterns to print a given shape,” Society of photo-optical instrumentation engineers, JM3, Apr. 2002.
A.E. Rosenbluth et al., “Method for forming arbitrary lithographic wavefronts using standard mask technology,” IBM disclosure YOR8-2005-0697, Oct. 4, 2007.
A.E. Rosenbluth et al., “Gobal optimization of masks, including film stack design to restore TM contrast to high NA TCC's,” Proceedings—SPIE The International Society for Optical Engineering, year 2007.
A.E. Rosenbluth et al., “A method for global optimization of lithographic source intensities under contingent requirements,” IBM disclosure YOR8-2007-0556, May 14, 2007.
A.E. Rosenbluth et al., “Global optimization of the illumination distribution to maximize integrated process window,” Procs. of SPIE, year 2006.
Inoue Tadanobu
Melville David O.
Muta Hidemasa
Rosenbluth Alan E.
Sakamoto Masahura
Aisaka Bryce
Alexanian Vazken
Dinh Paul
International Business Machines - Corporation
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