Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element
Patent
1994-09-26
1997-09-02
Nguyen, Vinh P.
Electricity: measuring and testing
Fault detecting in electric circuits and of electric components
Of individual circuit component or element
324750, G01R 3128
Patent
active
056636571
ABSTRACT:
Minority carrier diffusion lengths, especially long diffusion lengths that exceed the thickness of the wafer, are determined accurately and conveniently using techniques that limit errors due to lateral carrier diffusion, surface reflectivity, temperature variations, and inherent limitations in standard computation techniques that assume a diffusion length shorter than the wafer thickness. In particular embodiments, a probe is provided that senses the photovoltage in an area spaced from the edge of the illuminated region to provide a measurement substantially free of error from lateral carrier diffusion. The probe may also measure surface reflectivity simultaneously with measurement of photovoltage. Reflectivity correction is particularly beneficial in the analysis of wafers with dielectric coatings.
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Edelman Piotr
Jastrzebski Lubek
Kontkiewicz Andrzej
Lagowski Jacek
Nguyen Vinh P.
Semiconductor Diagostics, Inc.
University of South Florida
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