Data processing: measuring – calibrating – or testing – Measurement system in a specific environment – Mechanical measurement system
Reexamination Certificate
2005-10-07
2008-08-26
Lefkowitz, Edward (Department: 2855)
Data processing: measuring, calibrating, or testing
Measurement system in a specific environment
Mechanical measurement system
C073S789000
Reexamination Certificate
active
07418353
ABSTRACT:
A method for determining the stresses in a film applied to a substrate from measured substrate shape. The substrate is first analyzed using finite element techniques to obtain nodal forces at the surface of the substrate to which the film is applied, based on measured distortion data of the substrate surface. The film is then analyzed to calculate the film stresses from the applied nodal forces using finite element techniques. The invention may be applied to determine stresses in thin films applied to a variety of substrates, including those used for micro-electronic (e.g., integrated circuit) and micro-mechanical devices and/or for the lithography masks or other optical/projection systems used to fabricate such devices.
REFERENCES:
patent: 4812036 (1989-03-01), Inoue
patent: 5438879 (1995-08-01), Reda
patent: 5546811 (1996-08-01), Rogers et al.
patent: 5847283 (1998-12-01), Finot et al.
patent: 6031611 (2000-02-01), Rosakis et al.
patent: 6050138 (2000-04-01), Lynch et al.
patent: 6513389 (2003-02-01), Suresh et al.
patent: 6600565 (2003-07-01), Suresh et al.
patent: 2002/0012122 (2002-01-01), Boyd et al.
patent: 2002/0066310 (2002-06-01), Jachim
Feng et al., “Film Stress Characterization Using Substrate Shape Data and Numerical Techniques”, Mat. Res. Soc. Symp. Proc. vol. 750 pp. Y3.4.1-6. Fall 2002. Accessed Mar. 16, 2007. [online] http://lucy.mrs.org/cgi-bin/check—membership—access/proceedings/fall2002/y/Y3—4.pdf.
Engelstad et al., “Evaluation of intrinsic film stress distributions from induced substrate deformation”, Microelectronic Engineering, vols. 78-79, Proceedings of the 30th International Conference on Micro- and Nano-Engineering, Mar. 2005, pp. 404-409. (http://www.sciencedirect.com/science/article/B6V0W-4F9F5SF-7/2/cc63e26c64a5b40f7838.
Blech et al., “Determination of thin-film stresses on round substrates”, Journal of Applied Physics. vol. 97. Accessed Mar. 21, 2007. Published Jun. 1, 2005.
Elsevier Science S.A., N.G. Shang et al., Intrinsic stress evolution in diamond films prepared in a CH4-H2-NH3hot filament chemical vapor deposition system, Diamond and Related Materials 9, pp. 1388-1392, 2000.
American Institute of Physics, Mauro J. Kobrinsky et al., Diffusional creep in damascene Cu lines, Journal of Applied Physics, vol. 89, No. 1, pp. 91-98, Jan. 1, 2001.
American Vacuum Society, N.N. losad et al., Reactive magnetron sputter deposition of NbN and (Nb, It)N films related to sputtering source characterization and optimization, J. Vac. Sci. Technol. A 19(4), pp. 1840-1845, Jul./Aug. 2001.
R. P. Singh & A. J. Rosakis. Determination of the Yield Properties of Thin Films Using Enhanced Coherent Gradient Sensing, Experimental Mechanics, vol. 41, No. 4, pp. 403-411, Dec. 2001.
The Electrochemical Society, Inc., Sang Yeol Kang, et al., Metallorganic Chemical Vapor Deposition of Ru Films Using Cyclopentadienyl-Propylcyclopentadienylruthenium (II) and Oxygen, Journal of The Electrochemical Society, 149 (6) C317-C323, 2002.
American Institute of Physics, A. B. Mann, et al., Apparatus to measure wafer curvature for multilayer systems in a vacuum furnace, Review of Scientific Instruments, vol. 73, No. 4, pp. 1821-1827, Apr. 2002.
American Institute of Physics, Han-Su Kim et al., Effective method for stress reduction in thick porous silicon films, Applied Physics Letters, vol. 80, No. 13, pp. 2287-2289, Apr. 1, 2002.
Veeco Instruments, Inc., Mike Zecchino & Tim Cunningham, Thin Film Stress Measurement Using Dektak Stylus Profilers, 2004, Tucson, Arizona.
Bekaert Advanced Coating Technologies, Testing & Analysis, Stress Measurement, printed from http://www.bactusa.com/index.cfm?page=4f on Nov. 11, 2004, Amherst, New York.
Engelstad Roxann L.
Feng Zhaohua
Lovell Edward G.
DeWitt Ross & Stevens S.C.
Dunlap Jonathan
Lefkowitz Edward
Wisconsin Alumni Research Foundation
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