Determining diffusion length of minority carriers using...

Radiant energy – Luminophor irradiation – Methods

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C250S362000, C250S458100

Reexamination Certificate

active

07919762

ABSTRACT:
Methods (200, 300), apparatuses and systems (100) for determining minority carrier diffusion lengths in a semi-conductor structure (130), which may be a solar cell or a unprocessed or partially processed silicon sample, are disclosed. The luminescence (140) may comprise photoluminescence, electroluminescence, or both. Luminescence (140) is excited (212) in the structure (130), and the intensities of short- and long-wavelength luminescence (140) are measured (214). Luminescence intensities may be captured from either side of the sample using a single photodetector, a FPA, a CCD array (150), or a mapping tool. The luminescence (140) excited in the structure (130) may be filtered (160) at short and long cutoff wavelengths. Diffusion lengths of the structure (130) are generated (216) using a predefined theoretical relationship. The generating step (216) may comprise calculating (316) intensity ratios from luminescence intensities and converting (320) the intensity ratios into diffusion lengths using the predefined theoretical relationship.

REFERENCES:
patent: 4273421 (1981-06-01), Gurtler
patent: 5202744 (1993-04-01), Louis
patent: 6512384 (2003-01-01), Lagowski et al.
patent: 7026831 (2006-04-01), Hermes
patent: 7113276 (2006-09-01), Higgs et al.
patent: 2003/0094579 (2003-05-01), Hasegawa et al.
patent: 2005/0206402 (2005-09-01), Shi et al.
patent: 0 545 523 (1993-06-01), None
patent: 10-135291 (1998-05-01), None
patent: WO 02/03053 (2002-01-01), None
Wang, Chin Hsin et al., Minority-Carrier Lifetime & Surface Recombination Velocity Measurement by Frequency-Domain Photoluminescence, IEEE Transactions on Electron Devices, vol. 38, No. 9, Sep. 1991, pp. 2169-2180.
Supplementary European Search Report dated Dec. 28, 2009 for corresponding application EP 07784695.
Kaneta A. et al., “Near-field Photoluminescence Study in Violet Light Emitting InGaN Single Quantum Well Structures”, Phys. Stat. Sol. (c) 2, No. 7, pp. 2728-2731(2005)/DOI 10.1002/pssc.200461580.
International Search Report dated Oct. 3, 2007, for corresponding PCT application PCT/AU2007/001050.
Tarasov et al., “Defect Passivation in Multicrystalline Silicon for Solor Cells”Appl. Phys. Ltr., 85 (19): 4346-4348 (2004).
Ostapenko and Romero, “Defect Mapping in Full-Size Multi-Crystalline Si Wafers”Eur. Phys. J. Appl. Phys., 27: 55-58 (2004).
Ostapenko et al., “Defect Monitoring Using Scanning Photoluminescence Spectroscopy in Multicrystalline Silicon Wafers”Semicond. Sci. Technol., 15: 840-848 (2000).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Determining diffusion length of minority carriers using... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Determining diffusion length of minority carriers using..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Determining diffusion length of minority carriers using... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2724609

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.