Determining carbon concentration in silicon single crystal by FT

Details Determining carbon concentration in silicon single crystal by FT Determining carbon concentration in silicon single crystal by FT

1993-09-28

1995-08-22

Hannaher, Constantine

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2503414, G01N 2135

Patent

active

054442460

ABSTRACT:
The substitutional carbon concentration in a silicon single crystal is determined by determining by FT-IR the infrared absorbance spectrum using as a reference a substantially carbon-free silicon single crystal having substantially the same degree of free carrier absorption and produced by the same process as the sample. A subtraction factor used in the determination is calculated from the infrared absorbance spectra of the sample and the reference. A subtraction spectrum indicating the difference between the sample and the reference at the relevant wave number for carbon is computed, and the carbon concentration in the sample is determined from the distance of the absorption peak of the subtraction spectrum of the localized vibration of substitutional carbon in the sample from a base line of the subtraction spectrum. An FT-IR carbon concentration determination apparatus embodying the method is also disclosed.

REFERENCES:
patent: 4590574 (1986-05-01), Edmonds et al.
patent: 4862000 (1989-08-01), Kubota et al.
American National Standard, "Standard Test Method for Substitutional Atomic Carbon Content of Silicon by Infrared Absorption", pp. 523-524, F123-70T, 1976.
G. K. Agopian et al., "Determination of Interstitial Oxygen in Silicon Using Internal Calibration with Two Phonon Peaks", IBM Technical Disclosure Bulletin, vol. 23, No. 4, Sep. 1980, pp. 1389-1390.
P. Stallhofer et al., "Oxygen and Carbon Measurements on Silicon Slices by the IR Method", Solid State Technology, vol. 26, No. 8, Aug. 1983, pp. 233-237.

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