Electricity: measuring and testing – Determining nonelectric properties by measuring electric... – Beam of atomic particles
Patent
1982-06-09
1984-06-05
Tokar, Michael J.
Electricity: measuring and testing
Determining nonelectric properties by measuring electric...
Beam of atomic particles
324158T, 357 85, G01N 2700
Patent
active
044531273
ABSTRACT:
The true electrical channel length of a surface FET is determined by obtaining individual electron-beam-induced-current signal traces of source and drain junctions, thus eliminating the coupling effect of the two junctions. A reliable mask is formed as a function of the measured peak-to-peak distance subtracted by the depletion width.
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K. Okumura et al., "A Novel Method for Measurement of the Channel Length of Short Channel MOSFET's", J. Electrochem. Soc., vol. 129 (1982) Jun., No. 6, pp. 1338-1342.
C. L. Wilson, "Scanning Electron Microscope Measurements on Short Channel MOS Transistors", Solid-State Electronics, vol. 23 (1980), Apr., pp. 345-356.
J. Chern et al., "A New Method to Determine MOSFET Channel Length", IEEE Electron Device Letters, vol. EDL-1 (1980), Sep., No. 9, pp. 170-173.
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Junction Depth Measurement by an Electron Beam, IBM Technical Disclosure Bulletin, vol. 13, No. 3, Aug. 1970, p. 675.
Coca T. Rao
International Business Machines - Corporation
Kelley B. J.
Tokar Michael J.
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