Thermal measuring and testing – Temperature measurement – In spaced noncontact relationship to specimen
Patent
1987-10-15
1989-02-14
Envall, Jr., Roy N.
Thermal measuring and testing
Temperature measurement
In spaced noncontact relationship to specimen
G01J 500
Patent
active
048051870
ABSTRACT:
The present invention provides graphs and a method of using the graphs to determine the substrate temperature used during oxygen implantation of SIMOX wafers. The method establishes a relationship between the wavelength of minimum transmittance for infrared energy and the implantation temperature. Such relationships are then expressed, in the form of graphs, for various selected oxygen dose and energy levels.
REFERENCES:
patent: 4708677 (1987-11-01), Blank et al.
M. J. Kim et al., "Surface Restoration of Oxygen-Implanted Silicon," Journal of Applied Physics, 54(4), Apr. 1983, pp. 1991-1999.
Harbeke Guenther
Jastrzebski Lubomir L.
Davis Jr. James C.
Envall Jr. Roy N.
General Electric Company
Squire William
Webb II Paul R.
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