Determination of lithography misalignment based on curvature...

Details Determination of lithography misalignment based on curvature... Determination of lithography misalignment based on curvature...

2007-03-09

2008-10-07

Connolly, Patrick J (Department: 2877)

Optics: measuring and testing

By light interference

For dimensional measurement

C356S511000, C356S035500

Reexamination Certificate

active

07433051

ABSTRACT:
Provided are methods to be carried out prior to, while, and/or after performing a photolithographic process to a wafer that involve wafer misalignment assessment. The method involves obtaining curvature and/or deformation information of a surface of the wafer over a plurality of locations so as to obtain a curvature map of the wafer. The curvature map is processed to obtain a stress map of the wafer. The stress map is used to determine displacement of a layer of the wafer. The displacement information is used to determine a degree of misalignment in the photolithographic process.

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